MBT35200MT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT35200MT1G
SMD Transistor Code: G4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-457
MBT35200MT1G Transistor Equivalent Substitute - Cross-Reference Search
MBT35200MT1G Datasheet (PDF)
mbt35200mt1g.pdf
MBT35200MT1,SMBT35200MT1GHigh Current Surface Mount PNP SiliconSwitching Transistor for Load Management http://onsemi.comin Portable Applications35 VOLTSFeatures2.0 AMPS AEC-Q101 Qualified and PPAP CapablePNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements Pb-Free Packages are Available*MAXIM
mbt35200mt1 smbt35200mt1g.pdf
MBT35200MT1,SMBT35200MT1GHigh Current Surface Mount PNP SiliconSwitching Transistor for Load Management http://onsemi.comin Portable Applications35 VOLTSFeatures2.0 AMPS AEC-Q101 Qualified and PPAP CapablePNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements Pb-Free Packages are Available*MAXIM
mbt35200mt1-d.pdf
MBT35200MT1High Current SurfaceMount PNP SiliconSwitching Transistor forLoad Management inhttp://onsemi.comPortable Applications35 VOLTS2.0 AMPSMAXIMUM RATINGS (TA = 25C)PNP TRANSISTORRating Symbol Max UnitCollector-Emitter Voltage VCEO -35 VdcCOLLECTORCollector-Base Voltage VCBO -55 Vdc1, 2, 5, 6Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuou
mbt35200mt1.pdf
MBT35200MT1High Current Surface Mount PNP SiliconSwitching Transistor for Load Management in Portable Applicationshttp://onsemi.comFeatures35 VOLTS AEC-Q101 Qualified and PPAP Capable2.0 AMPS S Prefix for Automotive and Other Applications Requiring UniquePNP TRANSISTORSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and a
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