PBSS5160T-HF
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5160T-HF
Código: U6*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.27
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.9
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar PBSS5160T-HF
PBSS5160T-HF
Datasheet (PDF)
..1. Size:1212K kexin
pbss5160t-hf.pdf
SMD Type TransistorsPNP TransistorsPBSS5160T-HF (KBSS5160T-HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required
5.1. Size:284K philips
pbss5160t n.pdf
PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 18 July 2008 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assh
5.2. Size:691K nxp
pbss5160t.pdf
PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 15 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
5.3. Size:1741K kexin
pbss5160t.pdf
SMD Type TransistorsPNP TransistorsPBSS5160T (KBSS5160T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required1.Base2.E
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