All Transistors. PBSS5160T-HF Datasheet

 

PBSS5160T-HF Datasheet and Replacement


   Type Designator: PBSS5160T-HF
   SMD Transistor Code: U6*
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.27 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.9 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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PBSS5160T-HF Datasheet (PDF)

 ..1. Size:1212K  kexin
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PBSS5160T-HF

SMD Type TransistorsPNP TransistorsPBSS5160T-HF (KBSS5160T-HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required

 5.1. Size:284K  philips
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PBSS5160T-HF

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 18 July 2008 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assh

 5.2. Size:691K  nxp
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PBSS5160T-HF

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 15 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 5.3. Size:1741K  kexin
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PBSS5160T-HF

SMD Type TransistorsPNP TransistorsPBSS5160T (KBSS5160T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required1.Base2.E

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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Keywords - PBSS5160T-HF transistor datasheet

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 PBSS5160T-HF equivalent finder
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