PBSS5160T-HF Datasheet and Replacement
Type Designator: PBSS5160T-HF
SMD Transistor Code: U6*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.9 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
PBSS5160T-HF Transistor Equivalent Substitute - Cross-Reference Search
PBSS5160T-HF Datasheet (PDF)
pbss5160t-hf.pdf
SMD Type Transistors PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required ... See More ⇒
pbss5160t n.pdf
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh... See More ⇒
pbss5160t.pdf
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu... See More ⇒
pbss5160t.pdf
SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required 1.Base 2.E... See More ⇒
Datasheet: PBSS4330PAS , PBSS4360Z , PBSS5112PAP , PBSS5130PAP , PBSS5130QA , PBSS5160PAP , PBSS5160PAPS , PBSS5160QA , 2SD669A , PBSS5230PAP , PBSS5230QA , PBSS5240X , PBSS5240Z , PBSS5260PAP , PBSS5260QA , PBSS5330PAS , PBSS5360Z .
Keywords - PBSS5160T-HF transistor datasheet
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