WBP3306 Todos los transistores

 

WBP3306 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WBP3306
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 950 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

WBP3306 Datasheet (PDF)

 ..1. Size:477K  winsemi
 wbp3306.pdf pdf_icon

WBP3306

WBP3306WBP3306WBP3306WBP3306High Voltage Fast-Switching NPN Power TransistorFeatures Very high switching speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, Highspeed switching characteristics required such aslighting system, switching mode power supply.Absolute Maximum RatingsSymbol Parameter Test

 8.1. Size:387K  winsemi
 wbp3308.pdf pdf_icon

WBP3306

WBP3308WBP3308WBP3308WBP3308High Voltage Fast-Switching NPN Power TransistorFeatures Very high switching speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, Highspeed switching characteristics required such aslighting system, switching mode power supply.Absolute Maximum RatingsSymbol Parameter Test

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD882SQ-E | DTC115EEB

 

 
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