WBP3306 Datasheet. Specs and Replacement

Type Designator: WBP3306  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 950 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO-220

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WBP3306 datasheet

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WBP3306

WBP3306 WBP3306 WBP3306 WBP3306 High Voltage Fast-Switching NPN Power Transistor Features Very high switching speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test ... See More ⇒

 8.1. Size:387K  winsemi

 wbp3308.pdf pdf_icon

WBP3306

WBP3308 WBP3308 WBP3308 WBP3308 High Voltage Fast-Switching NPN Power Transistor Features Very high switching speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test ... See More ⇒

Detailed specifications: WBN13003A1, WBN13003B, WBN13003B2D, WBP13003D, WBP13005D, WBP13005D1, WBP13007-K, WBP13009-K, 2N3055, WBP3308, WBR13003, WBR13003B, WBR13003B2, WBR13003B2D, WBR13003B3, WBR13003D, WBR13003D1

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