All Transistors. WBP3306 Datasheet

 

WBP3306 Datasheet and Replacement


   Type Designator: WBP3306
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 950 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO-220
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WBP3306 Datasheet (PDF)

 ..1. Size:477K  winsemi
 wbp3306.pdf pdf_icon

WBP3306

WBP3306WBP3306WBP3306WBP3306High Voltage Fast-Switching NPN Power TransistorFeatures Very high switching speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, Highspeed switching characteristics required such aslighting system, switching mode power supply.Absolute Maximum RatingsSymbol Parameter Test

 8.1. Size:387K  winsemi
 wbp3308.pdf pdf_icon

WBP3306

WBP3308WBP3308WBP3308WBP3308High Voltage Fast-Switching NPN Power TransistorFeatures Very high switching speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, Highspeed switching characteristics required such aslighting system, switching mode power supply.Absolute Maximum RatingsSymbol Parameter Test

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: HMPSA94 | 2SC678 | 2N5369 | 2SB273 | DTL1642 | 2SA973 | 3DD5G

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