DME20B01 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DME20B01 📄📄
Código: A3
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 210
Encapsulados: SOT-753
📄📄 Copiar
Búsqueda de reemplazo de DME20B01
- Selecciónⓘ de transistores por parámetros
DME20B01 datasheet
dme20b01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20B01 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20c01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20C01 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se
dme20102.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20102 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
Otros transistores... DMA90401, DMC30401, DMC90401, DMC904F0, DMC904F1, DME20101, DME20102, DME20501, BD333, DME20C01, DMG21401, DMG50401, DMG90401, DMMT2907A, DMMT3904, DMR935E1, DMS935E1
Parámetros del transistor bipolar y su interrelación.
History: KT683B | 2SC4759 | 2SC4102FRA | BF758BA | 2SB279 | NSB9435 | 2SC2714O
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
mpsa13 transistor equivalent | кт817г характеристики | 2sc1972 | 2n5088 transistor equivalent | 2n5884 | bc640 | 2sc756 | oc44 transistor datasheet





