All Transistors. DME20B01 Datasheet

 

DME20B01 Datasheet and Replacement


   Type Designator: DME20B01
   SMD Transistor Code: A3
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-753
 

 DME20B01 Substitution

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DME20B01 Datasheet (PDF)

 ..1. Size:518K  panasonic
 dme20b01.pdf pdf_icon

DME20B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME20B01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.1. Size:517K  panasonic
 dme20101.pdf pdf_icon

DME20B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.2. Size:518K  panasonic
 dme20c01.pdf pdf_icon

DME20B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.3. Size:514K  panasonic
 dme20102.pdf pdf_icon

DME20B01

This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

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Datasheet: DMA90401 , DMC30401 , DMC90401 , DMC904F0 , DMC904F1 , DME20101 , DME20102 , DME20501 , BD777 , DME20C01 , DMG21401 , DMG50401 , DMG90401 , DMMT2907A , DMMT3904 , DMR935E1 , DMS935E1 .

History: NSBC114TDP6T5G | CENU45

Keywords - DME20B01 transistor datasheet

 DME20B01 cross reference
 DME20B01 equivalent finder
 DME20B01 lookup
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