ST2001HI Todos los transistores

 

ST2001HI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2001HI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 55 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: ISOWATT218

Búsqueda de reemplazo de transistor bipolar ST2001HI

 

ST2001HI Datasheet (PDF)

1.1. st2001hi.pdf Size:67K _1

ST2001HI
ST2001HI

ST2001HI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLOR TV AND MONITOR ISOWATT218 DESCRIPTION The ST2001HI is manufactured using Diffused Collector t

4.1. st2001.pdf Size:68K _st

ST2001HI
ST2001HI

ST2001HI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLOR TV AND MONITOR ISOWATT218 DESCRIPTION The ST2001HI is manufactured using collector diffused t

 5.1. st2009dhi.pdf Size:260K _st

ST2001HI
ST2001HI

ST2009DHI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLOR TVS ISOWATT218 DESCRIPTION The device is m

5.2. sst200 sst200a.pdf Size:67K _vishay

ST2001HI
ST2001HI

SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage: <0.9 V D High Quality Low-Level Signal D Mini-Microphones Amplification D High Input Impedance D Hearing Aids D Low Signal Loss/System Error D Very Low Noise D High-Gain, Low-Noise Amplifi

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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