ST2001HI
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2001HI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar ST2001HI
ST2001HI
Datasheet (PDF)
..1. Size:67K 1
st2001hi.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using DiffusedCollector t
8.1. Size:68K st
st2001.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using collectordiffused t
9.1. Size:260K st
st2009dhi.pdf
ST2009DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLORTVS ISOWATT218DESCRIPTION The device is m
9.2. Size:67K vishay
sst200 sst200a.pdf
SST200/200AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA)-0.3 to -0.9 -25 0.25 0.15FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage:
9.3. Size:982K winsok
wst2004.pdf
WST2004 N-Ch MOSFETFeatures Product SummeryRDSON (TYP.)BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m20V 450mSOT-723 Pin Configuration Applications DD33 Load/Power Switching Interfacing Switching Battery M
9.4. Size:1981K winsok
wst2005.pdf
WST2005 P-Ch MOSFETGeneral Description Product SummeryThe H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6Adevice particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr
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