ST2001HI Datasheet and Replacement

ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using DiffusedCollector t

ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using collectordiffused t

ST2009DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLORTVS ISOWATT218DESCRIPTION The device is m

SST200/200AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA)-0.3 to -0.9 -25 0.25 0.15FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage:

WST2004 N-Ch MOSFETFeatures Product SummeryRDSON (TYP.)BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m20V 450mSOT-723 Pin Configuration Applications DD33 Load/Power Switching Interfacing Switching Battery M

WST2005 P-Ch MOSFETGeneral Description Product SummeryThe H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6Adevice particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr