ST2001HI Datasheet, Equivalent, Cross Reference Search
Type Designator: ST2001HI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: ISOWATT218
ST2001HI Transistor Equivalent Substitute - Cross-Reference Search
ST2001HI Datasheet (PDF)
st2001hi.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using DiffusedCollector t
st2001.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using collectordiffused t
st2009dhi.pdf
ST2009DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLORTVS ISOWATT218DESCRIPTION The device is m
sst200 sst200a.pdf
SST200/200AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA)-0.3 to -0.9 -25 0.25 0.15FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage:
wst2004.pdf
WST2004 N-Ch MOSFETFeatures Product SummeryRDSON (TYP.)BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m20V 450mSOT-723 Pin Configuration Applications DD33 Load/Power Switching Interfacing Switching Battery M
wst2005.pdf
WST2005 P-Ch MOSFETGeneral Description Product SummeryThe H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6Adevice particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
