ST2001HI Datasheet PDF and Equivalents Search

 ..1. Size:67K  1

 st2001hi.pdf

ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION FOR COLOR TV AND MONITOR ISOWATT218 DESCRIPTION The ST2001HI is manufactured using Diffused Collector t... See More ⇒

 8.1. Size:68K  st

 st2001.pdf

ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION FOR COLOR TV AND MONITOR ISOWATT218 DESCRIPTION The ST2001HI is manufactured using collector diffused t... See More ⇒

 9.1. Size:260K  st

 st2009dhi.pdf

ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION FOR COLOR TVS ISOWATT218 DESCRIPTION The device is m... See More ⇒

 9.2. Size:67K  vishay

 sst200 sst200a.pdf

SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage ... See More ⇒

 9.3. Size:982K  winsok

 wst2004.pdf

WST2004 N-Ch MOSFET Features Product Summery RDSON (TYP.) BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m 20V 450m SOT-723 Pin Configuration Applications D D 3 3 Load/Power Switching Interfacing Switching Battery M... See More ⇒

 9.4. Size:1981K  winsok

 wst2005.pdf

WST2005 P-Ch MOSFET General Description Product Summery The H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6A device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr... See More ⇒