Биполярный транзистор ST2001HI - описание производителя. Основные параметры. Даташиты.
Наименование производителя: ST2001HI
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 55 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: ISOWATT218
ST2001HI Datasheet (PDF)
st2001hi.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using DiffusedCollector t
st2001.pdf
ST2001HI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCHEDPERFORMANCE FULLY INSULATED PACKAGE FOR EASYMOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS:1 HORIZONTAL DEFLECTION FOR COLORTV AND MONITORISOWATT218DESCRIPTIONThe ST2001HI is manufactured using collectordiffused t
st2009dhi.pdf
ST2009DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION FOR COLORTVS ISOWATT218DESCRIPTION The device is m
sst200 sst200a.pdf
SST200/200AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA)-0.3 to -0.9 -25 0.25 0.15FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage:
wst2004.pdf
WST2004 N-Ch MOSFETFeatures Product SummeryRDSON (TYP.)BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m20V 450mSOT-723 Pin Configuration Applications DD33 Load/Power Switching Interfacing Switching Battery M
wst2005.pdf
WST2005 P-Ch MOSFETGeneral Description Product SummeryThe H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6Adevice particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050