MJE15036 Datasheet. Equivalente

 ..1. Size:1008K  1
 mje15036.pdf

MJE15036 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features - MJE15037 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037. / Appli

 ..2. Size:218K  inchange semiconductor
 mje15036.pdf

isc Silicon NPN Power Transistor MJE15036 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = 0.5 A FE C h = 3000 (Min) @I = 2.0 A FE C Complement to Type MJE15037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in

 7.1. Size:977K  1
 mje15037.pdf

MJE15037 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features - MJE15036 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036. / Appli

 7.2. Size:141K  motorola
 mje15032.pdf

Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su

 7.3. Size:139K  onsemi
 mje15034g.pdf

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C

 7.4. Size:178K  onsemi
 mje15030g.pdf

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

 7.5. Size:223K  onsemi
 mje15028 mje15030 mje15029 mje15031.pdf

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-

 7.6. Size:64K  onsemi
 mje15034-35.pdf

MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com . . . designed for use as high-frequency drivers in audio amplifiers. hFE = 100 (Min) @ IC = 0.5 Adc 4.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150

 7.7. Size:89K  onsemi
 mje15032-33.pdf

ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

 7.8. Size:166K  onsemi
 mje15033g.pdf

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

 7.9. Size:178K  onsemi
 mje15031g.pdf

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll

 7.10. Size:72K  onsemi
 mje15034 mje15035.pdf

MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices www.onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON High Current Gain - Bandwidth Product 350 VOLTS, 50 WATTS TO-220 Compact Packa

 7.11. Size:75K  onsemi
 mje15032 mje15033.pdf

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -

 7.12. Size:139K  onsemi
 mje15035g.pdf

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C

 7.13. Size:166K  onsemi
 mje15032g.pdf

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

 7.14. Size:280K  cdil
 mje15032 33.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8

 7.15. Size:611K  jilin sino
 mje15032 mje15033.pdf

 7.16. Size:172K  cn sptech
 mje15031.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 APPLICATIONS Designed for use as high freque

 7.17. Size:172K  cn sptech
 mje15032.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = 0.5 A FE C h = 10 (Min) @I = 2.0 A FE C Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) S

 7.18. Size:172K  cn sptech
 mje15033.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )

 7.19. Size:173K  cn sptech
 mje15030.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 APPLICATIONS Designed for use as high freque

 7.20. Size:213K  inchange semiconductor
 mje15031.pdf

isc Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 Minimum Lot-to-Lot variations for robust device performance and reliable operat

 7.21. Size:132K  inchange semiconductor
 mje15032.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min) DC current gain - hFE = 50 (Min) @IC= 0.5 A hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA

 7.22. Size:213K  inchange semiconductor
 mje15033.pdf

isc Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in a

 7.23. Size:203K  inchange semiconductor
 mje15037.pdf

isc Silicon PNP Power Transistor MJE15037 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = -0.5 A FE C h = 3000 (Min) @I = -2.0 A FE C Complement to Type MJE15036 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers

 7.24. Size:211K  inchange semiconductor
 mje15030.pdf

isc Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 Minimum Lot-to-Lot variations for robust device performance and reliable operat