Справочник транзисторов. MJE15036

 

Биполярный транзистор MJE15036 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJE15036

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 250 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 30 MHz

Статический коэффициент передачи тока (hfe): 3000

Корпус транзистора: TO-220

Аналоги (замена) для MJE15036

 

 

MJE15036 Datasheet (PDF)

1.1. mje15036.pdf Size:1008K _1

MJE15036
MJE15036

MJE15036 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.  特征 / Features 直流电流增益高,集电极-发射极击穿电压高,高电流增益-带宽积,与 MJE15037 互补。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037.  用途 / Appli

3.1. mje15037.pdf Size:977K _1

MJE15036
MJE15036

MJE15037 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 / Features 直流电流增益高,集电极-发射极击穿电压高,高电流增益-带宽积,与 MJE15036 互补。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036.  用途 / Appli

3.2. mje15032.pdf Size:141K _motorola

MJE15036
MJE15036

Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high freque

 3.3. mje15034g.pdf Size:139K _onsemi

MJE15036
MJE15036

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc • C

3.4. mje15032-33.pdf Size:89K _onsemi

MJE15036
MJE15036

ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high–frequency drivers in audio amplifiers. * MJE15033 • DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 250 Vdc (Min) — M

 3.5. mje15032 mje15033.pdf Size:75K _onsemi

MJE15036
MJE15036

MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Sustaining Voltage -

3.6. mje15033g.pdf Size:166K _onsemi

MJE15036
MJE15036

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

3.7. mje15030g.pdf Size:178K _onsemi

MJE15036
MJE15036

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS • Coll

3.8. mje15034-35.pdf Size:64K _onsemi

MJE15036
MJE15036

MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com . . . designed for use as high-frequency drivers in audio amplifiers. • hFE = 100 (Min) @ IC = 0.5 Adc 4.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150

3.9. mje15032g.pdf Size:166K _onsemi

MJE15036
MJE15036

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd

3.10. mje15031g.pdf Size:178K _onsemi

MJE15036
MJE15036

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS • Coll

3.11. mje15035g.pdf Size:139K _onsemi

MJE15036
MJE15036

MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc • C

3.12. mje15034 mje15035.pdf Size:74K _onsemi

MJE15036
MJE15036

MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ I

3.13. mje15028 mje15030 mje15029 mje15031.pdf Size:79K _onsemi

MJE15036
MJE15036

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 Amperes POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc COMPLEMENTARY SILICON • Coll

3.14. mje15032 33.pdf Size:280K _cdil

MJE15036
MJE15036

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8

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