MJE15036 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE15036
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO-220
MJE15036 Transistor Equivalent Substitute - Cross-Reference Search
MJE15036 Datasheet (PDF)
0.1. mje15036.pdf 
Size:1008K _1
MJE15036 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 直流电流增益高，集电极－发射极击穿电压高，高电流增益-带宽积，与 MJE15037 互补。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037. 用途 / Appli
0.2. mje15036.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor MJE15036 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 250V(Min) CEO(SUS) ·DC current gain - : h = 5000 (Min) @I = 0.5 A FE C : h = 3000 (Min) @I = 2.0 A FE C ·Complement to Type MJE15037 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in
7.1. mje15037.pdf Size:977K _1
MJE15037 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package. 特征 / Features 直流电流增益高，集电极－发射极击穿电压高，高电流增益-带宽积，与 MJE15036 互补。 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036. 用途 / Appli
7.2. mje15032.pdf Size:141K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J E 1 5 0 3 2 / D S E M I C O N D U C T O R T E C H N I C A L D A T A N P N * M J E 1 5 0 3 2 C o m p l e m e n t a r y S i l i c o n P l a s t i c P N P P o w e r T r a n s i s t o r s * M J E 1 5 0 3 3 . . . d e s i g n e d f o r u s e a s h i g h f r e q u e
7.3. mje15034g.pdf Size:139K _onsemi
MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc • C
7.4. mje15032-33.pdf Size:89K _onsemi
ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high–frequency drivers in audio amplifiers. * MJE15033 • DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 250 Vdc (Min) — M
7.5. mje15032 mje15033.pdf Size:75K _onsemi
MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Sustaining Voltage -
7.6. mje15033g.pdf Size:166K _onsemi
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd
7.7. mje15030g.pdf Size:178K _onsemi
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS • Coll
7.8. mje15034-35.pdf Size:64K _onsemi
MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com . . . designed for use as high-frequency drivers in audio amplifiers. • hFE = 100 (Min) @ IC = 0.5 Adc 4.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150
7.9. mje15032g.pdf Size:166K _onsemi
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS • Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd
7.10. mje15031g.pdf Size:178K _onsemi
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS • Coll
7.11. mje15035g.pdf Size:139K _onsemi
MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc • C
7.12. mje15034 mje15035.pdf Size:74K _onsemi
MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON • hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ I
7.13. mje15028 mje15030 mje15029 mje15031.pdf Size:79K _onsemi
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http://onsemi.com Features 8 AMPERE • DC Current Gain Specified to 4.0 Amperes POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc COMPLEMENTARY SILICON • Coll
7.14. mje15032 33.pdf Size:280K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8
7.15. mje15032.pdf Size:132K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A ·Complement to Type MJE15033 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA
7.16. mje15030.pdf Size:211K _inchange_semiconductor
isc Silicon NPN Power Transistor MJE15030 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 150V(Min) CEO(SUS) ·High Current Gain-Bandwidth Product- : f = 30MHz(Min)@ I = 0.5A T C ·DC current gain - : h = 40 (Min) @I = 3.0 A FE C : h = 20 (Min) @I = 4.0 A FE C ·Complement to Type MJE15031 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat
7.17. mje15033.pdf Size:213K _inchange_semiconductor
isc Silicon PNP Power Transistor MJE15033 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = -250V(Min) CEO(SUS) ·DC current gain - : h = 50 (Min) @I = -0.5 A FE C : h = 10 (Min) @I = -2.0 A FE C ·Complement to Type MJE15032 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in a
7.18. mje15031.pdf Size:213K _inchange_semiconductor
isc Silicon PNP Power Transistor MJE15031 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 150V(Min) CEO(SUS) ·High Current Gain-Bandwidth Product- : f = 30MHz(Min)@ I = 0.5A T C ·DC current gain - : h = 40 (Min) @I = 3.0 A FE C : h = 20 (Min) @I = 4.0 A FE C ·Complement to Type MJE15030 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat
7.19. mje15037.pdf Size:203K _inchange_semiconductor
isc Silicon PNP Power Transistor MJE15037 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = -250V(Min) CEO(SUS) ·DC current gain - : h = 5000 (Min) @I = -0.5 A FE C : h = 3000 (Min) @I = -2.0 A FE C ·Complement to Type MJE15036 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
