LBC847CPDW1T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC847CPDW1T3G
Código: BG
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.38 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 420
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de LBC847CPDW1T3G
Principales características: LBC847CPDW1T3G
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
lbc847cpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
Otros transistores... LBC846BPDW1T3G , LBC847ALT3G , LBC847BDW1T3G , LBC847BLT3G , LBC847BN3T5G , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , 2SD2499 , LBC847CTT1G , LBC848ALT3G , LBC848BDW1T3G , LBC848BLT3G , LBC848BPDW1T3G , LBC848CDW1T3G , LBC848CLT3G , LBC848CPDW1T3G .
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