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MMBT5401LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT5401LT3G
   Código: 2L*
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT23
 

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MMBT5401LT3G Datasheet (PDF)

 ..1. Size:112K  onsemi
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf pdf_icon

MMBT5401LT3G

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI

 0.1. Size:125K  onsemi
nsvmmbt5401lt3g.pdf pdf_icon

MMBT5401LT3G

MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO

 4.1. Size:125K  onsemi
mmbt5401lt1g.pdf pdf_icon

MMBT5401LT3G

MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT

 4.2. Size:115K  onsemi
mmbt5401lt1-d.pdf pdf_icon

MMBT5401LT3G

MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: T1028 | MMBT5910

 

 
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