MMBT5401LT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5401LT3G
Código: 2L*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar MMBT5401LT3G
MMBT5401LT3G
Datasheet (PDF)
..1. Size:112K onsemi
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf 
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI
0.1. Size:125K onsemi
nsvmmbt5401lt3g.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO
4.1. Size:125K onsemi
mmbt5401lt1g.pdf
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT
4.2. Size:115K onsemi
mmbt5401lt1-d.pdf
MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS
4.3. Size:325K willas
mmbt5401lt1.pdf
FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o
4.4. Size:910K shenzhen
mmbt5401lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm
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