MMBT5401LT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5401LT3G
SMD Transistor Code: 2L*
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
MMBT5401LT3G Transistor Equivalent Substitute - Cross-Reference Search
MMBT5401LT3G Datasheet (PDF)
mmbt5401lt1g smmbt5401lt1g mmbt5401lt3g.pdf
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6CompliantCOLLECTORMAXIMUM RATI
nsvmmbt5401lt3g.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO
mmbt5401lt1g.pdf
MMBT5401LT1G,SMMBT5401LT1G,MMBT5401LT3GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236)CASE 318 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 6Compliant*COLLECTORMAXIMUM RAT
mmbt5401lt1-d.pdf
MMBT5401LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -150 VdcBASECollector-Base Voltage VCBO -160 Vdc2Emitter-Base Voltage VEBO -5.0 VdcEMITTERCollector Current - Continuous IC -500 mAdcS
mmbt5401lt1.pdf
FM120-M WILLASMMBT5401LT1THRUHigh Voltage TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in order to o
mmbt5401lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
