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2SCR554P5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SCR554P5
   Código: NH
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300(typ) MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar 2SCR554P5

 

2SCR554P5 Datasheet (PDF)

 ..1. Size:1815K  rohm
2scr554p5.pdf

2SCR554P5
2SCR554P5

2SCR554P5DatasheetMiddle Power Transistors (80V / 1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging speci

 6.1. Size:1546K  rohm
2scr554pfra.pdf

2SCR554P5
2SCR554P5

2SCR554P FRADatasheetMiddle Power Transistor (80V / 1.5A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

 6.2. Size:239K  rohm
2scr554p.pdf

2SCR554P5
2SCR554P5

Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NHDriver Packaging specifications Inner circuit (Unit : mm)(2)Package

 7.1. Size:435K  rohm
2scr554r.pdf

2SCR554P5
2SCR554P5

Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit : mm)1) Low saturation voltage, typicallyTSMT3VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA)2) High speed switching(3)(1) (2) Structure(1) Base(2) EmitterNPN Silicon epitaxial planar transistor(3) Collector Abbreviated symbol : NH Applications Inner circuitDriver(3) Pa

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