2SCR554P5 Datasheet. Specs and Replacement

Type Designator: 2SCR554P5  📄📄 

SMD Transistor Code: NH

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 typ MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

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2SCR554P5 datasheet

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2SCR554P5

2SCR554P5 Datasheet Middle Power Transistors (80V / 1.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging speci... See More ⇒

 6.1. Size:1546K  rohm

 2scr554pfra.pdf pdf_icon

2SCR554P5

2SCR554P FRA Datasheet Middle Power Transistor (80V / 1.5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC... See More ⇒

 6.2. Size:239K  rohm

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2SCR554P5

Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NH Driver Packaging specifications Inner circuit (Unit mm) (2) Package... See More ⇒

 7.1. Size:435K  rohm

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2SCR554P5

Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit mm) 1) Low saturation voltage, typically TSMT3 VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching (3) (1) (2) Structure (1) Base (2) Emitter NPN Silicon epitaxial planar transistor (3) Collector Abbreviated symbol NH Applications Inner circuit Driver (3) Pa... See More ⇒

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Detailed specifications: 2SC5876U3, 2SCR293P5, 2SCR346P, 2SCR502U3HZG, 2SCR512P5, 2SCR513P5, 2SCR533P5, 2SCR544P5, 2SC1815, 2SCR572D3, 2SCR572D3FRA, 2SCR573D3, 2SCR574D3FRA, BC847BHZG, BC847BU3, BC857BHZG, DTA115EUB

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