MRF8372R1 Todos los transistores

 

MRF8372R1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF8372R1
   Código: 8372
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.67 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 870 MHz
   Capacitancia de salida (Cc): 1.8 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de transistor bipolar MRF8372R1

 

MRF8372R1 Datasheet (PDF)

 ..1. Size:101K  motorola
 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

 6.1. Size:101K  motorola
 mrf8372rev0.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

 8.1. Size:181K  motorola
 mrf837.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

 8.2. Size:181K  motorola
 mrf837re.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

MOSTRAR MÁS

Otros transistores... MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , MRF653S , MRF837 , BC548 , MRF8372R2 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 , MRF859S , MRF860 .

History: BDX40-7

 

 
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