All Transistors. MRF8372R1 Datasheet

 

MRF8372R1 Datasheet and Replacement


   Type Designator: MRF8372R1
   SMD Transistor Code: 8372
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.67 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 870 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO8
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MRF8372R1 Datasheet (PDF)

 ..1. Size:101K  motorola
 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF8372R1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 6.1. Size:101K  motorola
 mrf8372rev0.pdf pdf_icon

MRF8372R1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 8.1. Size:181K  motorola
 mrf837.pdf pdf_icon

MRF8372R1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

 8.2. Size:181K  motorola
 mrf837re.pdf pdf_icon

MRF8372R1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

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Keywords - MRF8372R1 transistor datasheet

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 MRF8372R1 lookup
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