All Transistors. MRF8372R1 Datasheet

 

MRF8372R1 Datasheet and Replacement


   Type Designator: MRF8372R1
   SMD Transistor Code: 8372
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.67 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 870 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO8

 MRF8372R1 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF8372R1 Datasheet (PDF)

 ..1. Size:101K  motorola
 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒

 6.1. Size:101K  motorola
 mrf8372rev0.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒

 8.1. Size:181K  motorola
 mrf837.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

 8.2. Size:181K  motorola
 mrf837re.pdf pdf_icon

MRF8372R1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

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Datasheet: MRF5943 , MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , MRF653S , MRF837 , BC548 , MRF8372R2 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 , MRF859S , MRF860 .

History: AC150 | AC132 | KRC834F | KT646V | 2SC4106 | BC375 | L8050HPLT3G

Keywords - MRF8372R1 transistor datasheet

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