2SA509G Todos los transistores

 

2SA509G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA509G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 70 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA509G

 

Principales características: 2SA509G

 8.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA509G

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA509G

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 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA509G

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA509G

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

MOSTRAR MÁS

Otros transistores... 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , TIP32C , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , 2SA510O , 2SA510R .

 

 
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