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2SA509G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA509G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 70 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hfe): 70

Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar 2SA509G

 

2SA509G Datasheet (PDF)

 8.1. Size:756K  1
2sa509.pdf

2SA509G
2SA509G

 9.1. Size:94K  toshiba
2sa496 2sa505.pdf

2SA509G
2SA509G

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:306K  vishay
vs-fa72sa50lc.pdf

2SA509G
2SA509G

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. Size:214K  inchange semiconductor
2sa505.pdf

2SA509G
2SA509G

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 2SC1740 , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , 2SA510O , 2SA510R .

 

 
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