All Transistors. 2SA509G Datasheet

 

2SA509G Datasheet and Replacement


   Type Designator: 2SA509G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
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2SA509G Datasheet (PDF)

 8.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA509G

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA509G

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 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA509G

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA509G

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

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History: 2SA843 | KT897A | MMBT4122 | 2SB464 | BUX38 | 2SA1051A | 2N1963

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