All Transistors. 2SA509G Datasheet

 

2SA509G Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA509G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: X73

2SA509G Transistor Equivalent Substitute - Cross-Reference Search

 

2SA509G Datasheet (PDF)

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf

2SA509G 2SA509G

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf

2SA509G 2SA509G

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. Size:214K  inchange semiconductor
 2sa505.pdf

2SA509G 2SA509G

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Datasheet: 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 13003A , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , 2SA510O , 2SA510R .

 

 
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