2SB173B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB173B  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.125 W

Tensión colector-base (Vcb): 20 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.1 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO1

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2SB173B datasheet

 8.1. Size:107K  rohm
 2sb1733.pdf pdf_icon

2SB173B

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV at Ic = -500mA / IB = -25mA ROHM TUMT3 Abbreviated symbol EW (1) Base (2) Emitter (3) Collector Packaging specification

 8.2. Size:105K  rohm
 2sb1731.pdf pdf_icon

2SB173B

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM TUMT3 Abbreviated symbol FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un

 8.3. Size:70K  rohm
 2sb1730.pdf pdf_icon

2SB173B

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM TUMT3 Abbreviated symbol FV (1) Base Packaging specifications (2) Emitter (3) Collector Packag

 8.4. Size:105K  rohm
 2sb1732.pdf pdf_icon

2SB173B

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM TUMT3 Abbreviated symbol EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications

MOSTRAR MÁS

Otros transistores... 2SB169, 2SB16A, 2SB17, 2SB170, 2SB171, 2SB172, 2SB172A, 2SB173, BD336, 2SB174, 2SB175, 2SB176, 2SB177, 2SB178, 2SB178A, 2SB178B, 2SB178Q