All Transistors. 2SB173B Datasheet

 

2SB173B Datasheet and Replacement


   Type Designator: 2SB173B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO1
 

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2SB173B Datasheet (PDF)

 8.1. Size:107K  rohm
 2sb1733.pdf pdf_icon

2SB173B

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV at Ic = -500mA / IB = -25mA ROHM :TUMT3 Abbreviated symbol : EW (1) Base(2) Emitter(3) Collector Packaging specification

 8.2. Size:105K  rohm
 2sb1731.pdf pdf_icon

2SB173B

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM : TUMT3 Abbreviated symbol : FL (1)Base(2)Emitter(3)Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Un

 8.3. Size:70K  rohm
 2sb1730.pdf pdf_icon

2SB173B

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit : mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM : TUMT3 Abbreviated symbol : FV (1) Base Packaging specifications (2) Emitter(3) CollectorPackag

 8.4. Size:105K  rohm
 2sb1732.pdf pdf_icon

2SB173B

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM : TUMT3 Abbreviated symbol : EV (1)Baseat IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3896 | NB021FY | BC171C | NB011EK | TIX617 | 2SB178B | 2SB1503

Keywords - 2SB173B transistor datasheet

 2SB173B cross reference
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