PHT4NQ10T MOSFET Datasheet: N-Ch, 100V, 3.5A. Full specification with pinout and replacement list

PHT4NQ10T Specs and Replacement

   Type Designator: PHT4NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SC73

PHT4NQ10T substitution

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PHT4NQ10T datasheet

..1. Size:292K nxp
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PHT4NQ10T TrenchMOS standard level FET Rev. 02 2 May 2002 Product data M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHT4NQ10T in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications Primary side switch in DC to DC conver... See More ⇒

6.1. Size:174K nxp
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PHT4NQ10LT N-channel TrenchMOS logic level FET Rev. 2 28 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and b... See More ⇒

Detailed specifications: PHP29N08T , PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , K2611 , PHT6N06T , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN .