All MOSFET. PHT4NQ10T Datasheet

 

PHT4NQ10T Datasheet and Replacement


   Type Designator: PHT4NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SC73
 

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PHT4NQ10T Datasheet (PDF)

 ..1. Size:292K  nxp
 pht4nq10t.pdf pdf_icon

PHT4NQ10T

PHT4NQ10TTrenchMOS standard level FETRev. 02 2 May 2002 Product dataM3D0871. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHT4NQ10T in SOT223.2. Features TrenchMOS technology Very fast switching Surface mount package.3. Applications Primary side switch in DC to DC conver

 6.1. Size:174K  nxp
 pht4nq10lt.pdf pdf_icon

PHT4NQ10T

PHT4NQ10LTN-channel TrenchMOS logic level FETRev. 2 28 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.1.2 Features and b

Datasheet: PHP29N08T , PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , IRFZ48N , PHT6N06T , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN .

History: 2SK2610 | TWE3139K

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