All MOSFET. STD8N65M5 Datasheet

 

STD8N65M5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD8N65M5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: DPAK

STD8N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD8N65M5 Datasheet (PDF)

0.1. stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf Size:1298K _st

STD8N65M5
STD8N65M5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 Ω 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ■ Worldwide best RDS(on) * area 3 3 1

0.2. stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf Size:1239K _st

STD8N65M5
STD8N65M5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 Ω 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ■ Worldwide best RDS(on) * area 3 3 1

 9.1. std8nf25.pdf Size:826K _st

STD8N65M5
STD8N65M5

STD8NF25 N-channel 250 V, 318 mΩ, 8 A STripFET™ II Power MOSFET in DPAK package Datasheet — production data Features RDS(on) Order code VDSS ID max. STD8NF25 250 V < 420 mΩ 8 A TAB ■ 100% avalanche tested 3 ■ 175 °C junction temperature 1 Applications DPAK ■ Switching applications – Automotive Description Figure 1. Internal schematic diagram This Power MOSFE

9.2. std8n10.pdf Size:299K _st

STD8N65M5
STD8N65M5

This datasheet has been downloaded from http://www.digchip.com at this page

 9.3. std8ns25.pdf Size:122K _st

STD8N65M5
STD8N65M5

STD8NS25 N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V < 0.45 Ω 8 A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 1 DPAK DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding

9.4. stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf Size:698K _st

STD8N65M5
STD8N65M5

STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 Ω 7 A 1 IPAK STD8NM60N 650 V < 0.65 Ω 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 Ω 7 A 1 STF8NM60N 650 V < 0.65 Ω 7 A(1) D²PAK STP8NM60N 650 V < 0.65 Ω 7 A 3 3 1 2 1. Limited only by ma

 9.5. std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf Size:1402K _st

STD8N65M5
STD8N65M5

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh™II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V < 0.79 Ω 5 A STP8NM50N STU8NM50N ■ 100% avalanche tested ■ Low input capacitances and gate charge 3 3 2 2 1 1 ■ Low gate input resistance

9.6. std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf Size:726K _st

STD8N65M5
STD8N65M5

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 Ω 7 A 1 IPAK STF8NM60ND 650 V < 0.70 Ω 7 A TO-220 STP8NM60ND 650 V < 0.70 Ω 7 A(1) STU8NM60ND 650 V < 0.70 Ω 7 A 1. Limited only by maximum temperature allow

9.7. stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf Size:700K _st

STD8N65M5
STD8N65M5

STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 Ω 7 A 1 IPAK STD8NM60N 650 V < 0.65 Ω 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 Ω 7 A 1 STF8NM60N 650 V < 0.65 Ω 7 A(1) D²PAK STP8NM60N 650 V < 0.65 Ω 7 A 3 3 1 2 1. Limited only by ma

9.8. stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf Size:698K _st

STD8N65M5
STD8N65M5

STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 Ω 7 A 1 IPAK STD8NM60N 650 V < 0.65 Ω 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 Ω 7 A 1 STF8NM60N 650 V < 0.65 Ω 7 A(1) D²PAK STP8NM60N 650 V < 0.65 Ω 7 A 3 3 1 2 1. Limited only by ma

9.9. std8n80k5.pdf Size:1302K _st

STD8N65M5
STD8N65M5

STD8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 Ω 6 A 110 W TAB • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 1 • 100% avalanche tested DPAK • Zener protected Applications • Switching applications F

9.10. std8n06.pdf Size:341K _st

STD8N65M5
STD8N65M5

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V < 0.25 Ω 8 A TYPICAL R = 0.21 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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