STD8N65M5 Datasheet. Specs and Replacement

Type Designator: STD8N65M5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: DPAK

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STD8N65M5 datasheet

 8.1. Size:377K  st
std8n60dm2.pdf pdf_icon

STD8N65M5

STD8N60DM2 Datasheet N-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD8N60DM2 600 V 600 m 8 A 85 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze... See More ⇒

 9.1. Size:341K  1
std8n06-1 std8n06t4.pdf pdf_icon

STD8N65M5

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V ... See More ⇒

Detailed specifications: STD7N52K3, STD7NK40Z, STD7NM60N, STD7NM80, STD7NM80-1, STD7NS20, STD85N3LH5, STD86N3LH5, 75N75, STD8NM50N, STD8NM60N, STD8NM60ND, STD90N03L, STD90N03L-1, STD90N4F3, STD95N2LH5, STD95N3LLH6

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