All MOSFET. BSC100N10NSFG Datasheet

 

BSC100N10NSFG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC100N10NSFG
   Marking Code: 100N10NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TDSON8

 BSC100N10NSFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC100N10NSFG Datasheet (PDF)

 ..1. Size:654K  infineon
 bsc100n10nsf8 bsc100n10nsfg.pdf

BSC100N10NSFG BSC100N10NSFG

% ! !% D #:A0 DQ ' 381>>5?B=1

 7.1. Size:394K  infineon
 bsc100n06ls3g.pdf

BSC100N10NSFG BSC100N10NSFG

TypeBSC100N06LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 10 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli

 7.2. Size:524K  infineon
 bsc100n03msg.pdf

BSC100N10NSFG BSC100N10NSFG

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 7.3. Size:485K  infineon
 bsc100n03ms.pdf

BSC100N10NSFG BSC100N10NSFG

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 7.4. Size:689K  infineon
 bsc100n03ls.pdf

BSC100N10NSFG BSC100N10NSFG

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8

 7.5. Size:585K  infineon
 bsc100n06ls3.pdf

BSC100N10NSFG BSC100N10NSFG

pe % ! % TM #:A0A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?DR

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FDMC5614P

 

 
Back to Top