BSC130P03LSG MOSFET Datasheet: P-Ch, 30V, 12A. Full specification with pinout and replacement list

BSC130P03LSG Specs and Replacement

   Type Designator: BSC130P03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 65.6 nS
   Cossⓘ - Output Capacitance: 857 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TDSON8

BSC130P03LSG substitution

- MOSFET ⓘ Cross-Reference Search

BSC130P03LSG datasheet

..1. Size:595K infineon
bsc130p03lsg .pdf pdf_icon

BSC130P03LS G OptiMOS -P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 13 mW Enhancement mode ID -22.5 A Logic level 150 C operating temperature Avalanche rated; RoHS compliant PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant ... See More ⇒

9.1. Size:921K infineon
bsc13dn30nsfd.pdf pdf_icon

BSC13DN30NSFD MOSFET SuperSO8 OptiMOSTM3 Power-Transistor, 300 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Halogen-free according to IEC... See More ⇒

Detailed specifications: BSC110N06NS3G , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , 2N7000 , BSC150N03LDG , BSC152N10NSFG , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG .