All MOSFET. BSC130P03LSG Datasheet

 

BSC130P03LSG Datasheet and Replacement


   Type Designator: BSC130P03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65.6 nS
   Cossⓘ - Output Capacitance: 857 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TDSON8
 

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BSC130P03LSG Datasheet (PDF)

 ..1. Size:595K  infineon
 bsc130p03lsg .pdf pdf_icon

BSC130P03LSG

BSC130P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 13mW Enhancement modeID -22.5 A Logic level 150C operating temperature Avalanche rated; RoHS compliantPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant

 9.1. Size:921K  infineon
 bsc13dn30nsfd.pdf pdf_icon

BSC130P03LSG

BSC13DN30NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 300 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

Datasheet: BSC110N06NS3G , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , IRF9540 , BSC150N03LDG , BSC152N10NSFG , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG .

Keywords - BSC130P03LSG MOSFET datasheet

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