BSC130P03LSG Datasheet. Specs and Replacement

Type Designator: BSC130P03LSG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65.6 nS

Cossⓘ - Output Capacitance: 857 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TDSON8

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BSC130P03LSG datasheet

 ..1. Size:595K  infineon
 bsc130p03lsg .pdf pdf_icon

BSC130P03LSG

BSC130P03LS G OptiMOS -P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 13 mW Enhancement mode ID -22.5 A Logic level 150 C operating temperature Avalanche rated; RoHS compliant PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant ... See More ⇒

 9.1. Size:921K  infineon
 bsc13dn30nsfd.pdf pdf_icon

BSC130P03LSG

BSC13DN30NSFD MOSFET SuperSO8 OptiMOSTM3 Power-Transistor, 300 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Halogen-free according to IEC... See More ⇒

Detailed specifications: BSC110N06NS3G, BSC118N10NSG, BSC119N03SG, BSC120N03LSG, BSC120N03MSG, BSC123N08NS3G, BSC123N10LSG, BSC12DN20NS3G, IRFB4227, BSC150N03LDG, BSC152N10NSFG, BSC159N10LSFG, BSC160N10NS3G, BSC16DN25NS3G, BSC190N12NS3G, BSC190N15NS3G, BSC196N10NSG

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