BSC130P03LSG MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC130P03LSG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 69 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 22.5 A
Total Gate Charge (Qg): 54.9 nC
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: SuperSO8
BSC130P03LSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC130P03LSG Datasheet (PDF)
1.1. bsc130p03lsg rev1.04 .pdf 
Size:595K _infineon
BSC130P03LS G OptiMOS-P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 13 mW Enhancement mode ID -22.5 A Logic level 150°C operating temperature Avalanche rated; RoHS compliant PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant Type Package Marking L
Datasheet: BSC110N06NS3G , BSC118N10NSG , BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , IRFB3306 , BSC150N03LDG , BSC152N10NSFG , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG .
