IPB009N03LG MOSFET Datasheet: N-Ch, 30V, 180A. Full specification with pinout and replacement list

IPB009N03LG Specs and Replacement

   Type Designator: IPB009N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 5700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: TO263-7

IPB009N03LG substitution

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IPB009N03LG datasheet

..1. Size:1086K infineon
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IPB009N03L G MOSFET D -PAK 7pin OptiMOS 3 Power-Transistor, 30 V Features MOSFET for ORing and Uninterruptible Power Supply tab Qualified according to JEDEC1) for target applications N-channel Logic level 1 Ultra-low on-resistance R DS(on) 100% Avalanche tested 7 Pb-free plating; RoHS compliant Table 1 Key Performance Parameters Drain Parameter Va... See More ⇒

4.1. Size:441K infineon
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Type IPB009N03L G OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V MOSFET for ORing and Uninterruptible Power Supply RDS(on),max 0.95 mW Qualified according to JEDEC1) for target applications ID 180 A N-channel Logic level Ultra-low on-resistance R DS(on) PG-TO263-7 100% Avalanche tested Pb-free plating; RoHS compliant Type Pack... See More ⇒

4.2. Size:494K infineon
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Detailed specifications: IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 , IPB80P03P4L-07 , IPB90N04S4-02 , IPB90N06S4-04 , IPB90N06S4L-04 , AO4407A , IPB011N04LG , IPB011N04NG , IPB015N04LG , IPB015N04NG , IPB016N06L3G , IPB017N06N3G , IPB019N06L3G , IPB019N08N3G .