IPB019N06L3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB019N06L3G
Marking Code: 019N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 125
nC
trⓘ - Rise Time: 79
nS
Cossⓘ -
Output Capacitance: 3300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
TO263
IPB019N06L3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB019N06L3G
Datasheet (PDF)
..1. Size:541K infineon
ipb019n06l3 ipb019n06l3g.pdf
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3.1. Size:252K inchange semiconductor
ipb019n06l3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB019N06L3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI
6.1. Size:1072K infineon
ipb019n08n5.pdf
IPB019N08N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 100% avalanche tested7 Pb-free plating; RoHS compliant Industrial qual
6.2. Size:689K infineon
ipb019n08n3 ipb019n08n3g.pdf
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