IPP05CN10LG PDF and Equivalents Search

 

IPP05CN10LG PDF Specs and Replacement


   Type Designator: IPP05CN10LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 288 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: TO220
 

 IPP05CN10LG substitution

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IPP05CN10LG PDF Specs

 4.1. Size:563K  infineon
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IPP05CN10LG

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 5.1. Size:781K  infineon
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IPP05CN10LG

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 5.2. Size:245K  inchange semiconductor
ipp05cn10n.pdf pdf_icon

IPP05CN10LG

isc N-Channel MOSFET Transistor IPP05CN10N IIPP05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G , SI2302 , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG , IPP070N06LG .

History: NVTFS6H880N

Keywords - IPP05CN10LG MOSFET specs

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