IPP05CN10LG PDF Specs and Replacement
Type Designator: IPP05CN10LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 288 nS
Cossⓘ - Output Capacitance: 1480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
Package: TO220
IPP05CN10LG substitution
IPP05CN10LG PDF Specs
ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf
IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7... See More ⇒
ipp05cn10n.pdf
isc N-Channel MOSFET Transistor IPP05CN10N IIPP05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G , SI2302 , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG , IPP070N06LG .
History: NVTFS6H880N
Keywords - IPP05CN10LG MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NVTFS6H880N
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