IPP05CN10LG Datasheet. Specs and Replacement

Type Designator: IPP05CN10LG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 288 nS

Cossⓘ - Output Capacitance: 1480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: TO220

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IPP05CN10LG datasheet

 4.1. Size:563K  infineon
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IPP05CN10LG

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 5.1. Size:781K  infineon
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IPP05CN10LG

IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7... See More ⇒

 5.2. Size:245K  inchange semiconductor
ipp05cn10n.pdf pdf_icon

IPP05CN10LG

isc N-Channel MOSFET Transistor IPP05CN10N IIPP05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: IPP048N12N3G, IPP04CN10NG, IPP04N03LBG, IPP052N06L3G, IPP052NE7N3G, IPP055N03LG, IPP057N06N3G, IPP057N08N3G, STF13NM60N, IPP05CN10NG, IPP062NE7N3G, IPP065N03LG, IPP065N04NG, IPP065N06LG, IPP06CN10LG, IPP06CN10NG, IPP070N06LG

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