IPP065N06LG Spec and Replacement
Type Designator: IPP065N06LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 890 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220
IPP065N06LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP065N06LG Specs
ipb065n06lg ipp065n06lg.pdf
IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C ... See More ⇒
ipp065n03l.pdf
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ipp065n04n.pdf
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ipp065n03l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP065N03L IIPP065N03L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE ... See More ⇒
Detailed specifications: IPP055N03LG , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IRF2807 , IPP06CN10LG , IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G .
History: IPP60R190P6 | AP02N90JB
Keywords - IPP065N06LG MOSFET specs
IPP065N06LG cross reference
IPP065N06LG equivalent finder
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IPP065N06LG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPP60R190P6 | AP02N90JB
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