All MOSFET. IPW65R280E6 Datasheet

 

IPW65R280E6 Datasheet and Replacement


   Type Designator: IPW65R280E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247
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IPW65R280E6 Datasheet (PDF)

 ..1. Size:1885K  infineon
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IPW65R280E6

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 ..2. Size:242K  inchange semiconductor
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IPW65R280E6

isc N-Channel MOSFET Transistor IPW65R280E6IIPW65R280E6FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 5.1. Size:1337K  infineon
 ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf pdf_icon

IPW65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

 5.2. Size:2104K  infineon
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IPW65R280E6

MOSFET+

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Datasheet: IPW60R199CP , IPW60R250CP , IPW60R280C6 , IPW60R280E6 , IPW60R299CP , IPW65R070C6 , IPW65R080CFD , IPW65R280C6 , IRF630 , IPW65R660CFD , IPW90R120C3 , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 .

History: 2SJ416 | BSB280N15NZ3G | 12N65KG-TF1-T | SVF5N60F | R5016ANJ | ELM13401CA | DH150N12B

Keywords - IPW65R280E6 MOSFET datasheet

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