IPW65R280E6 Datasheet. Specs and Replacement

Type Designator: IPW65R280E6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO247

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IPW65R280E6 datasheet

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IPW65R280E6

isc N-Channel MOSFET Transistor IPW65R280E6 IIPW65R280E6 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS ... See More ⇒

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IPW65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒

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Detailed specifications: IPW60R199CP, IPW60R250CP, IPW60R280C6, IPW60R280E6, IPW60R299CP, IPW65R070C6, IPW65R080CFD, IPW65R280C6, 8205A, IPW65R660CFD, IPW90R120C3, IPW90R1K0C3, IPW90R1K2C3, IPW90R340C3, IPW90R500C3, IPW90R800C3, SPA02N80C3

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