BF410D Datasheet. Specs and Replacement
Type Designator: BF410D 📄📄
Type of Transistor: FET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.018 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 0.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
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BF410D datasheet
bf410a 410b 410c 410d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = sou... See More ⇒
Detailed specifications: BF327, BF350, BF351, BF352, BF353, BF410A, BF410B, BF410C, IRFP260, BF510, BF511, BF512, BF513, BF545A, BF545B, BF545C, BF556A
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
