BF410D MOSFET. Datasheet pdf. Equivalent
Type Designator: BF410D
Type of Transistor: FET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.018 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
BF410D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF410D Datasheet (PDF)
bf410a 410b 410c 410d.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou
Datasheet: BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C , IRFB3607 , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A .
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