BF410D Specs and Replacement
Type Designator: BF410D
Type of Transistor: FET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.018 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
BF410D substitution
BF410D Specs
bf410a 410b 410c 410d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = sou... See More ⇒
Detailed specifications: BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C , SPP20N60C3 , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A .
History: IXFY36N20X3
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
