IRF1010EZS Specs and Replacement
Type Designator: IRF1010EZS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
IRF1010EZS substitution
- MOSFET ⓘ Cross-Reference Search
IRF1010EZS datasheet
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf
PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 8.5m Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing tech... See More ⇒
irf1010ezs.pdf
Isc N-Channel MOSFET Transistor IRF1010EZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
auirf1010ezstrl.pdf
PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒
Detailed specifications: SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF540N , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL , IRF1104L , IRF1104S .
History: CED14G04
Keywords - IRF1010EZS MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: CED14G04
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