TK17J65U Datasheet and Replacement
Type Designator: TK17J65U
Marking Code: K17J65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: SC65 TO3P
TK17J65U substitution
TK17J65U Datasheet (PDF)
tk17j65u.pdf

TK17J65UMOSFETs Silicon N-Channel MOS (DTMOS)TK17J65UTK17J65UTK17J65UTK17J65U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.20 (typ.)(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)(3) Low leakage current: ID
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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