All MOSFET. TK1Q90A Datasheet

 

TK1Q90A Datasheet and Replacement


   Type Designator: TK1Q90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: PWMOLD2
 

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TK1Q90A Datasheet (PDF)

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TK1Q90A

TK1Q90AMOSFETs Silicon N-Channel MOS (-MOS)TK1Q90ATK1Q90ATK1Q90ATK1Q90A1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.7 (typ.)(2) High forward transfer admittance: |Yfs| = 1.0 S (typ.)(3) Low leakage current: IDSS = 1

Datasheet: TK17A65U , TK17J65U , TK18A30D , TK18A50D , TK18A60V , TK19A45D , TK19J55D , TK1P90A , 8205A , TK20A25D , TK20A60U , TK20E60U , TK20J50D , TK20J60U , TK20P04M1 , TK20S04K3L , TK20S06K3L .

History: AOI600A70

Keywords - TK1Q90A MOSFET datasheet

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