TK55A10J1 Datasheet. Specs and Replacement

Type Designator: TK55A10J1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO220SIS

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TK55A10J1 datasheet

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TK55A10J1

TK55A10J1 N MOS ( U-MOS ) TK55A10J1 mm Qg=110nC ( ) RDS (ON) = 8.4 m ( ) Yfs = 110 S ( ) ... See More ⇒

Detailed specifications: TK4P55D, TK4P60DA, TK4P60DB, TK50J30D, TK50J60U, TK50P03M1, TK50P04M1, TK50X15J1, IRFB3206, TK5A45DA, TK5A50D, TK5A53D, TK5A55D, TK5A60D, TK5A65DA, TK5A65D, TK5P50D

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