TK55A10J1 Datasheet and Replacement
Type Designator: TK55A10J1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO220SIS
TK55A10J1 substitution
TK55A10J1 Datasheet (PDF)
tk55a10j1.pdf
TK55A10J1 NMOS (U-MOS) TK55A10J1 : mm : Qg=110nC () :RDS (ON) = 8.4 m () : |Yfs| = 110 S ()
Datasheet: TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , 2N7002 , TK5A45DA , TK5A50D , TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D .
History: HYG023N03LR1U | 18N20
Keywords - TK55A10J1 MOSFET datasheet
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History: HYG023N03LR1U | 18N20
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