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TK5P50D Spec and Replacement


   Type Designator: TK5P50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK

 TK5P50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK5P50D Specs

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TK5P50D

TK5P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5P50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.4 to 4... See More ⇒

 9.1. Size:209K  toshiba
 tk5p53d.pdf pdf_icon

TK5P50D

TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5P53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth = 2.4 to 4.... See More ⇒

Detailed specifications: TK55A10J1 , TK5A45DA , TK5A50D , TK5A53D , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , IRF3205 , TK5P53D , TK60A08J1 , TK60J25D , TK60P03M1 , TK60S06K3L , TK65L60V , TK65S04K3L , TK6A45DA .

History: HUFA76429D3 | TSA23N50M | PDC3902X

Keywords - TK5P50D MOSFET specs

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