TK5P50D Datasheet. Specs and Replacement

Type Designator: TK5P50D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: DPAK

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TK5P50D datasheet

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TK5P50D

TK5P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5P50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.4 to 4... See More ⇒

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TK5P50D

TK5P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5P53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth = 2.4 to 4.... See More ⇒

Detailed specifications: TK55A10J1, TK5A45DA, TK5A50D, TK5A53D, TK5A55D, TK5A60D, TK5A65DA, TK5A65D, IRFZ44N, TK5P53D, TK60A08J1, TK60J25D, TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA

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