TK6A45DA MOSFET. Datasheet pdf. Equivalent
Type Designator: TK6A45DA
Marking Code: K6A45DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220SIS
TK6A45DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK6A45DA Datasheet (PDF)
tk6a45da.pdf
TK6A45DAMOSFETs Silicon N-Channel MOS (-MOS)TK6A45DATK6A45DATK6A45DATK6A45DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.1 (typ.)(2) High forward transfer admittance: |Yfs| = 3.0 S (typ.)(3) Low leakage current: IDS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .