TK6P53D Spec and Replacement
Type Designator: TK6P53D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: DPAK
TK6P53D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK6P53D Specs
tk6p53d.pdf
TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6P53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth = 2.4 to 4.... See More ⇒
Detailed specifications: TK65L60V , TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA , TK6A60D , TK6A65D , IRFP260N , TK70A06J1 , TK70J04J3 , TK70J20D , TK70X04K3 , TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D .
History: MRF177M | IPP110N20NA
Keywords - TK6P53D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: MRF177M | IPP110N20NA
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