All MOSFET. TK6P53D Datasheet

 

TK6P53D Datasheet and Replacement


   Type Designator: TK6P53D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: DPAK
 

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TK6P53D Datasheet (PDF)

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TK6P53D

TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6P53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode: Vth = 2.4 to 4.

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SM6536D1RL

Keywords - TK6P53D MOSFET datasheet

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