TK6P53D Datasheet. Specs and Replacement
Type Designator: TK6P53D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: DPAK
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TK6P53D datasheet
tk6p53d.pdf
TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6P53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode Vth = 2.4 to 4.... See More ⇒
Detailed specifications: TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D, TK6A55DA, TK6A60D, TK6A65D, IRFZ44, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, TK75A06K3, TK7A45DA, TK7A50D
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MOSFET Parameters. How They Affect Each Other
History: PD5B9BA
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