TK8A25DA Datasheet. Specs and Replacement
Type Designator: TK8A25DA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220SIS
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TK8A25DA datasheet
tk8a25da.pdf
TK8A25DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK8A25DA TK8A25DA TK8A25DA TK8A25DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.41 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth =... See More ⇒
tk8a25da.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8A25DA ITK8A25DA FEATURES Low drain-source on-resistance RDS(ON) = 0.41 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: TK7P50D, TK80A08K3, TK80E06K3A, TK80F08K3, TK80S04K3L, TK80S06K3L, TK80X04K3, TK8A10K3, IRFP064N, TK8A45DA, TK8A45D, TK8A50DA, TK8A50D, TK8A55DA, TK8A60DA, TK8A65D, TK8P25DA
Keywords - TK8A25DA MOSFET specs
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