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TK8P25DA Spec and Replacement


   Type Designator: TK8P25DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DPAK

 TK8P25DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8P25DA Specs

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TK8P25DA

TK8P25DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK8P25DA TK8P25DA TK8P25DA TK8P25DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.41 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth =... See More ⇒

Detailed specifications: TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA , TK8A50D , TK8A55DA , TK8A60DA , TK8A65D , K4145 , TK8S06K3L , TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 .

History: MRF177M | IPP110N20NA

Keywords - TK8P25DA MOSFET specs

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