TK20H50C Datasheet. Specs and Replacement

Type Designator: TK20H50C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO3P

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TK20H50C datasheet

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TK20H50C

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) TK20H50C Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 23 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒

Detailed specifications: TK15J60T, TK16H60C, TK17A25D, TK19H50C, TK20A20D, TK20A60T, TK20D60T, TK20D60U, TK10A60D, TK20J60T, TK40A10N1, TK40D10J1, TK40E10N1, TK50F15J1, TK55D10J1, TK60D08J1, TK65A10N1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.