All MOSFET. TK20H50C Datasheet

 

TK20H50C Datasheet and Replacement


   Type Designator: TK20H50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO3P
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TK20H50C Datasheet (PDF)

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TK20H50C

TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK20H50C Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 23 (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

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History: VBNC1303 | IRFS4010PBF

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