RSR010N10 Datasheet. Specs and Replacement
Type Designator: RSR010N10 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TSMT3
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RSR010N10 datasheet
rsr010n10.pdf
Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) 3) Small Surface Mount Package (TSMT3). Abbreviated symbol ZJ Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering ... See More ⇒
rsr010n10fha.pdf
RSR010N10FHA Nch 100V 1A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS TSMT3 100V (3) RDS(on) (Max.) 520mW (1) ID 1.0A PD 1.0W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BO... See More ⇒
Detailed specifications: RSJ550N10, RSJ650N10, RSM002N06, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, 12N60, RSR020N06, RSR025N03, RSR025N05, RSR030N06, RSU002N06, RSU002P03, RT1A045AP, RT1A050ZP
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History: MCQ03N06 | 2N7002KG8 | MCP20N70 | RSD050N06TL
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