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RSR010N10 Spec and Replacement


   Type Designator: RSR010N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: TSMT3

 RSR010N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSR010N10 Specs

 ..1. Size:1162K  rohm
rsr010n10.pdf pdf_icon

RSR010N10

Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) 3) Small Surface Mount Package (TSMT3). Abbreviated symbol ZJ Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering ... See More ⇒

 0.1. Size:1110K  rohm
rsr010n10fha.pdf pdf_icon

RSR010N10

RSR010N10FHA Nch 100V 1A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS TSMT3 100V (3) RDS(on) (Max.) 520mW (1) ID 1.0A PD 1.0W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BO... See More ⇒

 9.1. Size:241K  rohm
rsr015p03tl.pdf pdf_icon

RSR010N10

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Detailed specifications: RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , IRF530 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP .

History: DHS025N88I

Keywords - RSR010N10 MOSFET specs

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