RSR010N10 Datasheet and Replacement
Type Designator: RSR010N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: TSMT3
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RSR010N10 Datasheet (PDF)
rsr010n10.pdf

Data Sheet4V Drive Nch MOSFET RSR010N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features (3)1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2)3) Small Surface Mount Package (TSMT3).Abbreviated symbol : ZJ ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering
rsr010n10fha.pdf

RSR010N10FHA Nch 100V 1A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 100V(3) RDS(on) (Max.)520mW(1) ID1.0APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BO
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FS2302A | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | WM02P60M2 | STD4N62K3
Keywords - RSR010N10 MOSFET datasheet
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History: FS2302A | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | WM02P60M2 | STD4N62K3



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