RSR010N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: RSR010N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.37 Ohm
Package: TSMT3
RSR010N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSR010N10 Datasheet (PDF)
rsr010n10.pdf
Data Sheet4V Drive Nch MOSFET RSR010N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features (3)1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2)3) Small Surface Mount Package (TSMT3).Abbreviated symbol : ZJ ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering
rsr010n10fha.pdf
RSR010N10FHA Nch 100V 1A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 100V(3) RDS(on) (Max.)520mW(1) ID1.0APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BO
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