All MOSFET. CEF06N7 Datasheet


CEF06N7 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF06N7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO220F

CEF06N7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEF06N7 Datasheet (PDF)

1.1. cep06n7 ceb06n7 cef06n7.pdf Size:375K _cet


CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP06N7 700V 2? 6A 10V CEB06N7 700V 2? 6A 10V CEF06N7 700V 2? 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) T

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

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