CEF06N7 Datasheet. Specs and Replacement

Type Designator: CEF06N7  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

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CEF06N7 datasheet

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CEF06N7

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP06N7 700V 2 6A 10V CEB06N7 700V 2 6A 10V CEF06N7 700V 2 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES S TO-263(D... See More ⇒

Detailed specifications: CEF02N6G, CEF02N7G, CEF02N9, CEF03N8, CEF04N6, CEF04N65, CEF04N7G, CEF05N65, IRFP250N, CEF07N65, CEF07N65A, CEF07N7, CEP01N65, CEP01N6G, CEP02N65A, CEP02N65G, CEP02N6A

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.