CEB16N10 Datasheet. Specs and Replacement

Type Designator: CEB16N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO263

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CEB16N10 substitution

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CEB16N10 datasheet

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 cep16n10 ceb16n10.pdf pdf_icon

CEB16N10

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

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 cep16n10l ceb16n10l.pdf pdf_icon

CEB16N10

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MA... See More ⇒

Detailed specifications: CEB15A03, CEP15A03, CEB14A04, CEP14A04, CEB140N10, CEP140N10, CEB16N10L, CEP16N10L, STF13NM60N, CEP16N10, CEB13N10L, CEP13N10L, CEB13N10, CEP13N10, CEB14N5, CEF14N5, CEP14N5

Keywords - CEB16N10 MOSFET specs

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