CEB16N10 Datasheet and Replacement
Type Designator: CEB16N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO263
CEB16N10 Datasheet (PDF)
cep16n10 ceb16n10.pdf

CEP16N10/CEB16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
cep16n10l ceb16n10l.pdf

CEP16N10L/CEB16N10LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MA
Datasheet: CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , IRFZ46N , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 .
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