CEB16N10 MOSFET Datasheet: N-Ch, 100V, 15.2A. Full specification with pinout and replacement list

CEB16N10 Specs and Replacement

   Type Designator: CEB16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO263

CEB16N10 substitution

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CEB16N10 datasheet

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CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

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cep16n10l ceb16n10l.pdf pdf_icon

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MA... See More ⇒

Detailed specifications: CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , SI2302 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 .