All MOSFET. CEB16N10 Datasheet

 

CEB16N10 Datasheet and Replacement


   Type Designator: CEB16N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO263
 

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CEB16N10 Datasheet (PDF)

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 cep16n10 ceb16n10.pdf pdf_icon

CEB16N10

CEP16N10/CEB16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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 cep16n10l ceb16n10l.pdf pdf_icon

CEB16N10

CEP16N10L/CEB16N10LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MA

Datasheet: CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , 2N60 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 .

History: 13N50F | 12N70 | 2N6796 | CEB14G04 | UPA2562T1H | FDD6N20TF | FDD8750

Keywords - CEB16N10 MOSFET datasheet

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