All MOSFET. CEB21A2 Datasheet

 

CEB21A2 Datasheet and Replacement


   Type Designator: CEB21A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO263
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CEB21A2 Datasheet (PDF)

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CEB21A2

CEP21A2/CEB21A2N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 25A,RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 , 20N60 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 .

Keywords - CEB21A2 MOSFET datasheet

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