CEB21A2 Datasheet. Specs and Replacement

Type Designator: CEB21A2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 216 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO263

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CEB21A2 datasheet

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CEB21A2

CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

Detailed specifications: CEF08N6A, CEP08N6A, CEF1186, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, IRF740, CEB3060, CEB30N15L, CEB3120, CEB3205, CEB4060A, CEB4060AL, CEB45N10, CEB50N10

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.