CEB21A2 Specs and Replacement
Type Designator: CEB21A2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 216 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO263
CEB21A2 substitution
CEB21A2 datasheet
cep21a2 ceb21a2.pdf
CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒
Detailed specifications: CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 , IRF840 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , CEB4060A , CEB4060AL , CEB45N10 , CEB50N10 .
History: BFC21
Keywords - CEB21A2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
