All MOSFET. CED06N7 Datasheet

 

CED06N7 Datasheet and Replacement


   Type Designator: CED06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
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CED06N7 Datasheet (PDF)

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CED06N7

CED06N7/CEU06N7N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES700V, 5A, RDS(ON) = 2 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI8404DB | HLML6401 | PFF12N65 | SQ4940AEY | STF24N60M2 | NP110N04PUK | AP85T03GH-HF

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