All MOSFET. CED06N7 Datasheet

 

CED06N7 Datasheet and Replacement


   Type Designator: CED06N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

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CED06N7 Datasheet (PDF)

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CED06N7

CED06N7/CEU06N7N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES700V, 5A, RDS(ON) = 2 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: CED02N7G , CED02N7G-1 , CED02N9 , CED03N8 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , IRFB4227 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 .

History: IPI45N04S4L-08

Keywords - CED06N7 MOSFET datasheet

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