CED06N7 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED06N7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO251
CED06N7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED06N7 Datasheet (PDF)
0.1. ceu06n7 ced06n7.pdf 
Size:363K _cet
CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25
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