CED06N7 Datasheet. Specs and Replacement

Type Designator: CED06N7  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO251

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CED06N7 datasheet

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CED06N7

CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒

Detailed specifications: CED02N7G, CED02N7G-1, CED02N9, CED03N8, CED04N6, CED04N65, CED04N7G, CED05N65, IRF640N, CED07N65A, CED08N6A, CED12N10, CED12N10L, CED14G04, CEFF634, CEFF640, CEPF634

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.