All MOSFET. CED06N7 Datasheet

 

CED06N7 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED06N7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO251

CED06N7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED06N7 Datasheet (PDF)

0.1. ceu06n7 ced06n7.pdf Size:363K _cet

CED06N7
CED06N7

CED06N7/CEU06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 5A, RDS(ON) = 2Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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