All MOSFET. CED840A Datasheet

 

CED840A Datasheet and Replacement


   Type Designator: CED840A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO251
 

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CED840A Datasheet (PDF)

 ..1. Size:398K  cet
 ceu840a ced840a.pdf pdf_icon

CED840A

CED840A/CEU840AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES500V, 7.5A, RDS(ON) = 0.85 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25

 9.1. Size:408K  cet
 ceu84a4 ced84a4.pdf pdf_icon

CED840A

CED84A4/CEU84A4N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 80A, RDS(ON) = 5.1m @VGS = 10V.RDS(ON) = 7.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMU

Datasheet: CEUF634 , CEUF640 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , IRF3710 , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 .

History: SFF10N100 | BLP06N08G-B

Keywords - CED840A MOSFET datasheet

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