CED840A Specs and Replacement
Type Designator: CED840A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO251
CED840A substitution
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CED840A datasheet
ceu840a ced840a.pdf
CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
ceu84a4 ced84a4.pdf
CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU... See More ⇒
Detailed specifications: CEUF634 , CEUF640 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , AO3400 , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 .
Keywords - CED840A MOSFET specs
CED840A cross reference
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