CED840A Datasheet. Specs and Replacement

Type Designator: CED840A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO251

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CED840A datasheet

 ..1. Size:398K  cet
 ceu840a ced840a.pdf pdf_icon

CED840A

CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒

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 ceu84a4 ced84a4.pdf pdf_icon

CED840A

CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1m @VGS = 10V. RDS(ON) = 7.8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: CEUF634, CEUF640, CED73A3G, CED740A, CED75A3, CED830G, CED83A3, CED83A3G, IRF640N, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G, CEG2288

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