CED840A MOSFET. Datasheet pdf. Equivalent
Type Designator: CED840A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 125 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO251
CED840A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED840A Datasheet (PDF)
0.1. ceu840a ced840a.pdf 
Size:398K _cet
CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25
9.1. ceu84a4 ced84a4.pdf Size:408K _cet
CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU
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